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HS 854232 - memories | TR2B HSBOT

memories

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854232

HS 854232 - memories

memories

subheading
85423211

Multi-component electronic integrated circuit (MCO) memories; For 2022, those specified in note 12 (b)(3,4) of the chapter, before those specified in note 9 (b)(3,4) of the chapter

Multi-component electronic integrated circuit (MCO) memories; For 2022, those specified in note 12 (b)(3,4) of the chapter, before those specified in note 9 (b)(3,4) of the chapter

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85423219

Other electronic integrated circuit memories; For 2022, those specified in note 12 (b)(3,4) of the chapter, before those specified in note 9 (b)(3,4) of the chapter

Other electronic integrated circuit memories; For 2022, those specified in note 12 (b)(3,4) of the chapter, before those specified in note 9 (b)(3,4) of the chapter

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85423231

Dynamic random access main memories (D-RAMs); memory capacity <= 512 Mbit

Dynamic random access main memories (D-RAMs); memory capacity <= 512 Mbit

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85423239

Dynamic random access main memories (D-RAMs); memory capacity > 512 Mbit

Dynamic random access main memories (D-RAMs); memory capacity > 512 Mbit

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85423245

Static random access main memories (S-RAMs) (including random access caches (cache-RAMs))

Static random access main memories (S-RAMs) (including random access caches (cache-RAMs))

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85423255

UV-erasable, programmable, read-only memories (EPROMs)

UV-erasable, programmable, read-only memories (EPROMs)

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85423261

Electrically erasable, programmable and read-only flash memories (E2PROMs); memory capacity: <= 512Mbit

Electrically erasable, programmable and read-only flash memories (E2PROMs); memory capacity: <= 512Mbit

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85423269

Electrically erasable, programmable and read-only flash memories (E2PROMs); memory capacity: > 512 Mbit

Electrically erasable, programmable and read-only flash memories (E2PROMs); memory capacity: > 512 Mbit

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